MOCVD (Metal Organic Chemical Vapor Deposition) System

  AIXTRON   RF200/4  RF-S GaN / AlGaN  MOCVD  system   is  located  at  Bilkent  Nanotechnology Research Center   Nanolab  building.

  For realization of any semiconductor device first process is to grow the crystal with different layers of materials and different doping concentration.   MOCVD (Metal Organic Chemical Vapor Deposition), also called OMCVD (Organometallic Chemical Vapor Deposition), MOVPE (Metal Organic   vapor phase epitaxy), is being used for crystal growth since 1960. Before that MBE( Molecular Beam Epitaxy), VPE (Vapor Phase Epitaxy) and LPE   (Liquid Phase Epitaxy) used. Metal Organic Chemical Vapor Deposition (MOCVD) is one of the two key enabling technologies critical for growing   epiwafers of III-V compounds (MBE is the other). MOCVD relies on metal-organic compounds, such as trimethyl gallium or trimethyl aluminum, that   act as precursors for the material in thin films. The materials grown contain some combination of gallium, indium, aluminum, nitrogen, phosphorus or   arsenic. The process consists of transporting the precursors via a carrier gas to a hot zone within a growth chamber. These precursors either dissociate   or react with another compound to produce thin films consisting of a single element or of a compound. Varying the composition of deposited materials   and doping in the epilayers produces the end device.

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