BİLKENT UNIVERSITY NANOTECHNOLOGY RESEARCH CENTER

PUBLICATIONS

SCI JOURNAL PUBLICATIONS BEFORE 1998

OZBAY GROUP PUBLICATIONS

25)	S. K. Diamond, E. Özbay, M. J. W. Rodwell, and D. M. Bloom, "Resonant Tunneling Diodes for Switching Applications" Applied Physics Letters, vol.52, 2163-2165 (1989). (pdf)

24)

S. K. Diamond, E. Özbay, M. J. W. Rodwell, Y. C. Pao, E. Wolak, J. S. Harris and D. M. Bloom, "Fabrication of Resonant Tunneling Diodes for switching applications", Electron Device Letters, EDL-10, p.104-106 (1989). (pdf)

23)

E. Ozbay, S. K. Diamond and D. M. Bloom, "Pulse Forming and Triggering using Resonant Tunneling Diode Structures", Electronics Letters, Vol. 26, No.14, p.1046-1048 (1990). (pdf)

22)

E. Wolak, E. Ozbay, B.G. Park, S.K. Diamond, D.M. Bloom, J.S. Harris,Jr. and E.R. Brown, "The Design, Growth and Fabrication of GaAs/AlAs RTD’s with Peak Current Densities over 2*10⁵ A/cm² " Journal of Applied Physics, 69 (5), p. 3345-3350, (1991). (pdf)

21)

I. P. Batra, S. Ciraci, and E. Ozbay, "Strain and dipole effects in covalent-polar semiconductor superlattices," Physical Review B, vol. 44, no. 11, pp. 5550-5555 (1991). (pdf)

20)

A. Black, E. Ozbay, and D. M. Bloom, "Colliding Pulse Phase Detector for Picosecond Resolution Timing Measurements," Electronics Letters, Vol. 27, No.18, p.1620-1622 (1991). (pdf)

19)

E. Ozbay, K. D. Li and D. M. Bloom, "2.0 psec, 150 GHz GaAs Monolithic Photodiode and All-Electronic Sampler", Photonics Technology Letters, PTL-3, p.570-572 (1991).(pdf)

18)

E. Ozbay and D.M. Bloom, "110 GHz Monolithic Resonant Tunneling Diode Trigger Circuit", Electron Device Letters, EDL-12, p.480-482 (1991). (pdf)

17)

D. H. Chow, J. N. Schulman, E. Ozbay, and D. M. Bloom, "Investigation of InGaAs/AlAs Resonant Tunneling Diodes," Applied Physics Letters, vol. 61, n. 14, p.1685 (1992).(pdf)

16)

K. D. Li, A. S. Hou, E. Ozbay, and D. M. Bloom, "2.0 psec GaAs photodiode optoelectronic circuit for correlation applications," Applied Physics Letters, vol. 61, n. 26, p.3104 (1992). (pdf)

15)

E. Ozbay , D.M. Bloom, D. H. Chow, and J. N. Schulman, " 1.7 psec Microwave Integrated Circuit Compatible InAs/AlSb Resonant Tunneling Diodes," Electron Device Letters, EDL-14, p. 400 (1993). (pdf)

14)

J. S. Bostak, D. W. Van Der Weide, B. A. Auld, D. M. Bloom and E. Ozbay, "All-Electronic Terahertz Spectroscopy System," Journal of Optical Society of America B, vol. 11, p. 2561(1994). (pdf)

13)

E. Ozbay, E. Michel, G. Tuttle, R. Biswas, M. Sigalas, and K.M. Ho, “Micromachined millimeter-wave photonic bandgap crystals,” Applied Physics Letters, volume 64, p. 2059 (1994). (pdf)

12)

E. Ozbay, A. Abeyta, G. Tuttle, M. Tringides, R. Biswas, C.T. Chan, C. Soukoulis, and K.M. Ho, ”Measurement of Three-Dimensional Photonic Band-Gap in New Crystal Made of Dielectric Rods,” Physical Review B50, p.1945 (1994). (pdf)

11)

E. Ozbay, E. Michel, G. Tuttle, R. Biswas, K.M. Ho, J. Bostak, and D. M. Bloom, "Terahertz spectroscopy of three-dimensional photonic band gap crystal," Optics Letters 19, p.1155 (1994). (pdf)

10)

E. Ozbay, G. Tuttle, R. Biswas, K.M. Ho, J. Bostak, and D. M. Bloom, "New double-etch geometry for millimeter-wave photonic crystals with a semi-tunable photonic band gap," Applied Physics Letters, 65, p. 1617 (1994).(pdf)

09)

J. Fastenau, E. Ozbay, G. Tuttle, and F. Laabs, "Epitaxial Lift-Off of Thin InAs Layers," Journal of Electronic Materials, 24 (6), p. 757 (1995). (pdf)

08)

E. Ozbay, G.Tuttle, R. Biswas, M. Sigalas, C.M. Soukoulis, and K.M. Ho, "Defect Structures in a layer-by-layer photonic band gap,” Physical Review B51, 13961 (1995). (pdf)

07)

S. D. Cheng, R. Biswas, E. Ozbay, J.S. McCalmont, G. Tuttle and K.M. Ho, “Optimized Dipole Antennas on Photonic Band Gap Crystals,” Applied Physics Letters, volume 67, p. 3399 (1995).(pdf)

06)

E. Ozbay, G. Tuttle, J.S. McCalmont, R. Biswas, M. Sigalas, C.M. Soukoulis and K.M. Ho, "Laser-Micromachined Millimeter-Wave Photonic Band Gap Cavity Structures" Applied Physics Letters, volume 67, p. 1969 (1995). (pdf)

05)

R. Biswas, E. Ozbay, and K.M. Ho,” Photonic Band Gaps with Novel Double-Etched Structures,” Journal of Applied Physics. volume 80, p. 6749 (1996). (pdf)

04)

E. Ozbay, B. Temelkuran, G.Tuttle, M. Sigalas, C.M. Soukoulis, and K.M. Ho "Defect Structures in Metallic Photonic Crystals" Applied Physics Letters volume 69, p. 3797 (1996). (pdf)

03)

E. Ozbay, and B. Temelkuran, "Reflection Properties and Defect Formation in Photonic Crystals" Applied Physics Letters, volume 69, p. 743 (1996). (pdf)

02)

E. Ozbay, " Layer-by-layer Photonic Band Gap Crystals: From Microwave to the Far-Infrared," Journal of Optical Society of America B. 13, p. 1945 (1996). (pdf)

01)

E. Ozbay, S. Islam, M. Gokkavas, O. Aytur, and M.S. Unlu, “ High-Speed Resonant Cavity Enhanced Schottky Photodiodes,” Photonics Technology Letters., 9, p. 672 (1997). (pdf)

AKTAS GROUP PUBLICATIONS

23)

Salvador, G. Liu, W. Kim, O. Aktas, A. Botchkarev., H. Morkoc, "Properties of a Si doped GaN/AlGaN single-quantum-well," Applied Physics Letters, vol. 67, p.p. 3322-3324, 1995

22)

Z. Chen, W. Kim, A. Salvador, S.N. Mohammad, O. Aktas, H. Morkoc, "Schottky barriers on anodic-sulfide-passivated GaAs and their stability," Journal Of Applied Physics, vol. 78, p.p. 3920-3924, 1995

21)

M. Smith, G.D. Chen, J.Z. Li, J.Y. Lin, H.X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev., H. Morkoc, "Excitonic recombination In GaN grown by molecular-beam epitaxy," vol. 67, p.p. 3387-3389, 1995

20)

T.J. Schmidt, X.H. Yang, W. Shan, J.J Song, A. Salvador, W. Kim, O. Aktas, A. Botchkarev., H. Morkoc, "Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy," Applied Physics Letters, vol. 68, p.p. 1820-1822, 1996

19)

S.N. Mohammad, Z. Fan, A.E. Botchkarev, W. Kim, O. Aktas, A. Salvador, H. Morkoc, "Near-ideal platinum-GaN Schottky diodes," Electronics Letters, vol. 32, p.p. 598-599, 1996

18)

K. Suzue, S.N. Mohammad, Z.F. Fan, W. Kim, O. Aktas, A.E. Botchkarev, H. Morkoc, "Electrical conduction in platinum-gallium nitride Schottky diodes," Journal Of Applied Physics, vol. 80, p.p. 4467-4478, 1996

17)

Q. Zhu, A. Botchkarev., W. Kim, O. Aktas, A. Salvador, B. Sverdlov, H. Morkoc, S.C.Y. Tsen, D.J. Smith, "Structural properties of GaN films grown on sapphire by molecular beam epitaxy," Applied Physics Letters, vol. 68, p.p. 1141-1143, 1996

16)

Z.F. Fan, S.N. Mohammad, W. Kim, O. Aktas, A.E. Botchkarev, H. Morkoc, "Very low resistance multilayer ohmic contact to n-GaN," Applied Physics Letters, vol. 68, p.p. 1672-1674, 1996.

15)

D.C. Look, Z.Q. Fang, W. Kim, O. Aktas, A. Botchkarev., A. Salvador, H. Morkoc, "Thermally stimulated current trap in GaN," Applied Physics Letters, Vol. 68, p.p 3775-3777, 1996

14)

D.C. Reynolds, D.C. Look, W. Kim, O. Aktas, A. Botchkarev., A. Salvador, H. Morkoc, Talwar D.N., "Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy," Journal Of Applied Physics, vol. 80, p.p. 594-596, 1996.

13)

D.C. Look, D.C. Reynolds, W. Kim, O. Aktas, A. Botchkarev., A. Salvador, H. Morkoc, "Deep-center hopping conduction in GaN," Journal Of Applied Physics, vol. 80, p.p. 2960-2963, 1996

12)

Z. Fan, S.N. Mohammad, W. Kim, O. Aktas, A.E. Botchkarev, K. Suzue, H. Morkoc, Duxstad K., Haller E.E., "Ohmic contacts and Schottky barriers to n-GaN," Journal Of Electronic Materials, vol. 25, p.p. 1703-1708, 1996

11)

W. Kim, A. Salvador, A.E. Botchkarev, O. Aktas, S.N. Mohammad, H. Morkoc, "Mg-doped p-type GaN grown by reactive molecular beam epitaxy," Applied Physics Letters, vol. 69, p.p. 559-561, 1996

10)

S.N. Mohammad, Z.F. Fan, A. Salvador, O. Aktas, A.E. Botchkarev, W. Kim, H. Morkoc, "Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors," Applied Physics Letters, vol. 69, p.p. 1420-1422, 1996.

09)

Z.F. Fan, S.N. Mohammad, O. Aktas, A.E. Botchkarev, A. Salvador, H. Morkoc, "Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field effect transistors," Applied Physics Letters, vol. 69, p.p. 1229-1231, 1996.

08)

Salvador, W. Kim, O. Aktas, A. Botchkarev., Z. Fan H. Morkoc, "Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia," Applied Physics Letters, vol. 69, p.p.2692-2694, 1996

07)

O. Aktas, Z.F. Fan, S. N. Mohammad, A.E. Botchkarev and H. Morkoc, " High temperature characteristics of AlGaN/GaN modulation doped field effect transistors," Applied Physiscs Letters, vol. 69, no 25, p.p. 3872-3874, Dec 1996

06)

W. Kim, O. Aktas, A.E. Botchkarev, A. Salvador, S. N. Mohammad and H. MorkoÃ§, Reactive molecular beam epitaxy of wurtzite GaN: materials characteristics and growth kinetics," Journal of Applied Physics, vol. 79, p.p. 7657-7666, May 1996

05)

Z.F. Fan, C.Z. Lu, A.E. Botchkarev, H. Tang, A. Salvador, O. Aktas, W. Kim, and H. Morkoc, "AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)," Electronics Letters, vol. 33, p.p. 814-815, 1997.

04)

S.N. Mohammad, A.E. Botchkarev, A. Salvador, W. Kim, O. Aktas, and H. Morkoc, "Proposed explanation of the anomalous doping characteristics of III-V nitrides," Philosophical Magazine B, vol. 76, no. 2, p.p. 131-143, 1997

03)

D.C. Look, D.C. Reynolds, R.L. Jones, W. Kim, O. Aktas, A. Botchkarev., A. Salvador, H. Morkoc,"Electrical and optical properties of semi-insulating GaN," Materials Science And Engineering B, vol. 44, p.p. 423-426, 1997.

02)

O. Aktas, Z. F. Fan, A. Botchkarev, S.N. Mohammad, M.Roth, L. Kehias and H. Morkoc, "Microwave performance of AlGaN/GaN Inverted MODFETs," Electron Device Letters, vol 18, no 6, p.p. 293-295, Jun 1997

01)

W. Kim, O. Aktas, A. Salvador, A. Botchkarev, B. Sverdlov, S.N. Mohammad, and H. Morkoc, "MBE grown high quality GaN films and devices," Solid-State Electronics, vol. 41, p.p. 169-175, 1997.

-1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

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